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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 DESCRIPTION *With TO-3PN package *High voltage *High speed switching APPLICATIONS *For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 600 500 10 10 20 4 100 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA; IB=0 IC=5A IB=1.0A IC=5A ;IB=1.0A VCB=600V; IE=0 VEB=10V; IC=0 IC=5A ; VCE=4V IC=1A ; VCE=12V f=1MHz ; VCB=10V 10 8 105 MIN 500 0.5 1.3 1 0.1 30 MHz pF TYP. MAX UNIT V V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=5A; VCC=200V IB1=0.5A; IB2=-1A RL=40 1.0 4.5 0.5 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3831 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3831 4 |
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